Compliance current effect on switching behavior of hafnium oxide based RRAM

Yanfei Qi; Chun Zhao; Yuxiao Fang; Qifeng Lu; Chenguang Liu; Li Yang; Ce Zhou Zhao

doi:10.1109/IPFA.2017.8060188

Compliance current effect on switching behavior of hafnium oxide based RRAM

Yanfei Qi, Chun Zhao, Yuxiao Fang, Qifeng Lu, Chenguang Liu, Li Yang, Ce Zhou Zhao

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

3 Citations (Scopus)

Abstract

In this study, we compared the basic switching behaviors of HfO₂, Al₂O₃ and HfAlO_x (Hf: Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO₂ based RRAM (20 → 320) increases with compliance current whereas it drops not obviously for Al₂O₃ based RRAM (85→54). HfAlOx (Hf: Al=9:1)) based one has the best resistance ratio (300-440) and resistance stability. All low resistance state (LRS) resistance values of three samples are around 100Ω with large compliance current while there is a difference in HRS resistance which causes the ratio difference accordingly. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The appropriate compliance current selection and doping technology to high-k materials should be considered in further study.

Original language	English
Title of host publication	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538617793
DOIs	https://doi.org/10.1109/IPFA.2017.8060188
Publication status	Published - 5 Oct 2017
Event	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China Duration: 4 Jul 2017 → 7 Jul 2017

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2017-July

Conference

Conference	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Country/Territory	China
City	Chengdu
Period	4/07/17 → 7/07/17

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10.1109/IPFA.2017.8060188

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Qi, Y., Zhao, C., Fang, Y., Lu, Q., Liu, C., Yang, L., & Zhao, C. Z. (2017). Compliance current effect on switching behavior of hafnium oxide based RRAM. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 (pp. 1-4). (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2017.8060188

Qi, Yanfei ; Zhao, Chun ; Fang, Yuxiao et al. / Compliance current effect on switching behavior of hafnium oxide based RRAM. 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{447346a900564bcea5ac23385a321d3c,

title = "Compliance current effect on switching behavior of hafnium oxide based RRAM",

abstract = "In this study, we compared the basic switching behaviors of HfO2, Al2O3 and HfAlOx (Hf: Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO2 based RRAM (20 → 320) increases with compliance current whereas it drops not obviously for Al2O3 based RRAM (85→54). HfAlOx (Hf: Al=9:1)) based one has the best resistance ratio (300-440) and resistance stability. All low resistance state (LRS) resistance values of three samples are around 100Ω with large compliance current while there is a difference in HRS resistance which causes the ratio difference accordingly. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The appropriate compliance current selection and doping technology to high-k materials should be considered in further study.",

author = "Yanfei Qi and Chun Zhao and Yuxiao Fang and Qifeng Lu and Chenguang Liu and Li Yang and Zhao, {Ce Zhou}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 ; Conference date: 04-07-2017 Through 07-07-2017",

year = "2017",

month = oct,

day = "5",

doi = "10.1109/IPFA.2017.8060188",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--4",

booktitle = "24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017",

}

Qi, Y , Zhao, C , Fang, Y , Lu, Q , Liu, C , Yang, L & Zhao, CZ 2017, Compliance current effect on switching behavior of hafnium oxide based RRAM. in 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2017-July, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017, Chengdu, China, 4/07/17. https://doi.org/10.1109/IPFA.2017.8060188

Compliance current effect on switching behavior of hafnium oxide based RRAM. / Qi, Yanfei ; Zhao, Chun ; Fang, Yuxiao et al.
24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Compliance current effect on switching behavior of hafnium oxide based RRAM

AU - Qi, Yanfei

AU - Zhao, Chun

AU - Fang, Yuxiao

AU - Lu, Qifeng

AU - Liu, Chenguang

AU - Yang, Li

AU - Zhao, Ce Zhou

PY - 2017/10/5

Y1 - 2017/10/5

N2 - In this study, we compared the basic switching behaviors of HfO2, Al2O3 and HfAlOx (Hf: Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO2 based RRAM (20 → 320) increases with compliance current whereas it drops not obviously for Al2O3 based RRAM (85→54). HfAlOx (Hf: Al=9:1)) based one has the best resistance ratio (300-440) and resistance stability. All low resistance state (LRS) resistance values of three samples are around 100Ω with large compliance current while there is a difference in HRS resistance which causes the ratio difference accordingly. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The appropriate compliance current selection and doping technology to high-k materials should be considered in further study.

AB - In this study, we compared the basic switching behaviors of HfO2, Al2O3 and HfAlOx (Hf: Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO2 based RRAM (20 → 320) increases with compliance current whereas it drops not obviously for Al2O3 based RRAM (85→54). HfAlOx (Hf: Al=9:1)) based one has the best resistance ratio (300-440) and resistance stability. All low resistance state (LRS) resistance values of three samples are around 100Ω with large compliance current while there is a difference in HRS resistance which causes the ratio difference accordingly. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The appropriate compliance current selection and doping technology to high-k materials should be considered in further study.

UR - http://www.scopus.com/inward/record.url?scp=85045073351&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2017.8060188

DO - 10.1109/IPFA.2017.8060188

M3 - Conference Proceeding

AN - SCOPUS:85045073351

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 1

EP - 4

BT - 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017

Y2 - 4 July 2017 through 7 July 2017

ER -

Qi Y , Zhao C , Fang Y , Lu Q , Liu C , Yang L et al. Compliance current effect on switching behavior of hafnium oxide based RRAM. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2017.8060188

Compliance current effect on switching behavior of hafnium oxide based RRAM

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