@inproceedings{9985174169414295881c101fb64d0a0d,
title = "Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs",
abstract = "Both enhancement-and depletion-mode AlGaN/GaN metal-insulator-semiconductor HEMTs were fabricated with Al2O3 as the gate dielectric formed by atomic layer deposition (ALD). With the common problems of threshold voltage hysteresis in AlGaN/GaN MIS-HEMTs, DC I-V and fast transient I-V as well as frequency-dependent C-V measurements were performed to characterize the threshold voltage shifts Δ Vth and hence to systematically study the underlying mechanism. The experimental results reveal that Δ Vth can be as high as 1.0 V at V Gmax =5 V in transient I-V measurements despite the much lower values of 0.42 V in static and CV measurements. This has significant implications in using AlGaN/GaN MIS-HEMTs for high voltage switching applications. Besides, multi-frequency C-V measurements show that the primary Δ Vth is frequency independent but the second onset of voltage shifts (Δ V2) shows obvious frequency dependence.",
keywords = "AlGaN/GaN MIS-HEMT, AlO/III-N interface traps (fast and slow) and threshold voltage hysteresis.",
author = "Miao Cui and Yutao Cai and Sang Lam and Wen Liu and Chun Zhao and Mitrovic, {Ivona Z.} and Stephen Taylor and Chalker, {Paul R.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 ; Conference date: 06-06-2018 Through 08-06-2018",
year = "2018",
month = oct,
day = "9",
doi = "10.1109/EDSSC.2018.8487160",
language = "English",
series = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",
}