Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

Z. J. Shen; C. Zhao; C. Z. Zhao; I. Z. Mitrovic; L. Yang; W. Y. Xu; E. G. Lim; T. Luo; Y. B. Huang

doi:10.1109/ICICDT.2019.8790838

Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

Z. J. Shen, C. Zhao, C. Z. Zhao, I. Z. Mitrovic, L. Yang, W. Y. Xu, E. G. Lim, T. Luo, Y. B. Huang

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

2 Citations (Scopus)

Abstract

In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 10⁴ s and endurance over 10² cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790838
Publication status	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

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insert (key words)
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10.1109/ICICDT.2019.8790838

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Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., Lim, E. G., Luo, T., & Huang, Y. B. (2019). Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790838 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790838

Shen, Z. J. ; Zhao, C. ; Zhao, C. Z. et al. / Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

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title = "Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures",

abstract = "In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 104 s and endurance over 102 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.",

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author = "Shen, {Z. J.} and C. Zhao and Zhao, {C. Z.} and Mitrovic, {I. Z.} and L. Yang and Xu, {W. Y.} and Lim, {E. G.} and T. Luo and Huang, {Y. B.}",

note = "Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790838",

language = "English",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

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Shen, ZJ, Zhao, C, Zhao, CZ, Mitrovic, IZ, Yang, L, Xu, WY, Lim, EG, Luo, T & Huang, YB 2019, Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790838, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790838

Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. / Shen, Z. J.; Zhao, C.; Zhao, C. Z. et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790838 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T1 - Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

AU - Shen, Z. J.

AU - Zhao, C.

AU - Zhao, C. Z.

AU - Mitrovic, I. Z.

AU - Yang, L.

AU - Xu, W. Y.

AU - Lim, E. G.

AU - Luo, T.

AU - Huang, Y. B.

N1 - Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: © 2019 IEEE.

PY - 2019/6

Y1 - 2019/6

N2 - In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 104 s and endurance over 102 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.

AB - In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 104 s and endurance over 102 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.

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Shen ZJ, Zhao C, Zhao CZ, Mitrovic IZ, Yang L, Xu WY et al. Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790838. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790838

Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

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