Bionic Sypantic Application of OxRRAM Devices

Zongjie Shen, Chun Zhao*, Li Yang, Cezhou Zhao

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

1 Citation (Scopus)

Abstract

In this work, bionic synaptic application of OxRRAM (oxide RRAM) devices with various materials are provided and reviewed, mainly including transition metal oxides and non-metal oxides fabricated by different methodologies. It is possible to stimulate synaptic function in the human brain by electrical signals due to the typical 'MIM' sandwich structure and efficient fabrication process of OxRRAM devices. Based on elementary electrical characteristics including switching behavior, endurance performance and retention property, artificial synaptic behaviors mimicked by OxRRAM devices were under investigation, such as potentiation/depression response, long-/short-Term plasticity (STP/LTP) and spike-Time-dependent plasticity (STDP). In addition, the transition from short-Term memory (STM) to longterm memory (LTM) of OxRRAM devices revealed the extensive prospect of its bionic application in artificial neuron network (ANN).

Original languageEnglish
Title of host publicationProceedings - International SoC Design Conference, ISOCC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages163-164
Number of pages2
ISBN (Electronic)9781728183312
DOIs
Publication statusPublished - 21 Oct 2020
Event17th International System-on-Chip Design Conference, ISOCC 2020 - Yeosu, Korea, Republic of
Duration: 21 Oct 202024 Oct 2020

Publication series

NameProceedings - International SoC Design Conference, ISOCC 2020

Conference

Conference17th International System-on-Chip Design Conference, ISOCC 2020
Country/TerritoryKorea, Republic of
CityYeosu
Period21/10/2024/10/20

Keywords

  • Artificial synaptic behaviors
  • OxRRAM
  • Solution-processed

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