TY - JOUR
T1 - Bioinspired Flexible, Dual-Modulation Synaptic Transistors toward Artificial Visual Memory Systems
AU - Sun, Fuqin
AU - Lu, Qifeng
AU - Liu, Lin
AU - Li, Lianhui
AU - Wang, Yingyi
AU - Hao, Mingming
AU - Cao, Zhiguang
AU - Wang, Zihao
AU - Wang, Shuqi
AU - Li, Tie
AU - Zhang, Ting
N1 - Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/1
Y1 - 2020/1
N2 - A prominent challenge for artificial synaptic devices toward artificial perception systems is hardware redundancy, which demands neuromorphic devices that integrate both sensing and processing functions. Inspired by the biological visual and nervous systems, a novel flexible, dual-modulation synaptic field-effect transistor (SFET) is demonstrated in this work. The flexible SFET is constructed with zinc oxide nanowires and sodium alginate, which acts as the semiconductor layer and the gate dielectric, respectively. An excitatory postsynaptic current in this artificial synapse can be triggered by both electrical and ultraviolet stimuli as presynaptic spikes as a result of the electric double layer effect and the photoelectric effect. More importantly, through the co-modulation of light and electric stimuli, the memory level of the artificial synapses can be tuned based on the transformation between short-term plasticity and long-term plasticity initiated by the gate voltage. Different voltages can modulate the memory retention levels of the optical inputs similar to the function of the optic nerve system. The underlying mechanisms for the SFET are investigated using Fourier transform infrared spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy. Overall, the devices provide a novel idea to mimic visual memory, showing a promising strategy for future electronic eyes.
AB - A prominent challenge for artificial synaptic devices toward artificial perception systems is hardware redundancy, which demands neuromorphic devices that integrate both sensing and processing functions. Inspired by the biological visual and nervous systems, a novel flexible, dual-modulation synaptic field-effect transistor (SFET) is demonstrated in this work. The flexible SFET is constructed with zinc oxide nanowires and sodium alginate, which acts as the semiconductor layer and the gate dielectric, respectively. An excitatory postsynaptic current in this artificial synapse can be triggered by both electrical and ultraviolet stimuli as presynaptic spikes as a result of the electric double layer effect and the photoelectric effect. More importantly, through the co-modulation of light and electric stimuli, the memory level of the artificial synapses can be tuned based on the transformation between short-term plasticity and long-term plasticity initiated by the gate voltage. Different voltages can modulate the memory retention levels of the optical inputs similar to the function of the optic nerve system. The underlying mechanisms for the SFET are investigated using Fourier transform infrared spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy. Overall, the devices provide a novel idea to mimic visual memory, showing a promising strategy for future electronic eyes.
KW - artificial visual memory systems
KW - dual modulation
KW - flexible synaptic transistors
KW - neuromorphic devices
UR - http://www.scopus.com/inward/record.url?scp=85075753551&partnerID=8YFLogxK
U2 - 10.1002/admt.201900888
DO - 10.1002/admt.201900888
M3 - Article
AN - SCOPUS:85075753551
SN - 2365-709X
VL - 5
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
IS - 1
M1 - 1900888
ER -