Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements

Y. X. Fang; C. Zhao; I. Z. Mitrovic; S. Hall; L. Yang; C. Z. Zhao

doi:10.1016/j.mee.2019.111113

Bias-stress stability and radiation response of solution-processed AlO_x dielectrics investigated by on-site measurements

Y. X. Fang, C. Zhao^*, I. Z. Mitrovic, S. Hall, L. Yang, C. Z. Zhao

^*Corresponding author for this work

University of Liverpool

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, the effects of biased irradiation on solution-processed and atomic layer deposited (ALD) AlO_x thin films MOS capacitors were investigated by an on-site technique. The devices were irradiated by a 662-KeV Cs¹³⁷ γ-ray radiation source under different positive/negative gate biases. The radiation time was up to 10⁵ s and the total dose was around 92 Gy. It has been found that radiation could result in reversibility of flat-band voltage shifts (ΔV_FB) of solution-processed AlO_x MOS capacitors, which were further analyzed through calculating the radiation induced oxide traps (ΔN_ot) in AlO_x thin film and interface traps at AlO_x/Si interface (ΔN_it). Additionally, solution-processed AlO_x MOS capacitors exhibit more radiation induced charges compared to those fabricated by ALD, which indicates that solution-processed AlO_x thin films contain abundant precursor impurities and bonded oxygen.

Original language	English
Article number	111113
Journal	Microelectronic Engineering
Volume	217
DOIs	https://doi.org/10.1016/j.mee.2019.111113
Publication status	Published - 15 Sept 2019

Keywords

AlO
Biased γ-ray radiation stress stability
High-k gate dielectric
Solution-processed

Access to Document

10.1016/j.mee.2019.111113

Cite this

@article{76b0e4379dcd49d5858a84462a94794f,

title = "Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements",

abstract = "In this work, the effects of biased irradiation on solution-processed and atomic layer deposited (ALD) AlOx thin films MOS capacitors were investigated by an on-site technique. The devices were irradiated by a 662-KeV Cs137 γ-ray radiation source under different positive/negative gate biases. The radiation time was up to 105 s and the total dose was around 92 Gy. It has been found that radiation could result in reversibility of flat-band voltage shifts (ΔVFB) of solution-processed AlOx MOS capacitors, which were further analyzed through calculating the radiation induced oxide traps (ΔNot) in AlOx thin film and interface traps at AlOx/Si interface (ΔNit). Additionally, solution-processed AlOx MOS capacitors exhibit more radiation induced charges compared to those fabricated by ALD, which indicates that solution-processed AlOx thin films contain abundant precursor impurities and bonded oxygen.",

keywords = "AlO, Biased γ-ray radiation stress stability, High-k gate dielectric, Solution-processed",

author = "Fang, {Y. X.} and C. Zhao and Mitrovic, {I. Z.} and S. Hall and L. Yang and Zhao, {C. Z.}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = sep,

day = "15",

doi = "10.1016/j.mee.2019.111113",

language = "English",

volume = "217",

journal = "Microelectronic Engineering",

issn = "0167-9317",

}

TY - JOUR

T1 - Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements

AU - Fang, Y. X.

AU - Zhao, C.

AU - Mitrovic, I. Z.

AU - Hall, S.

AU - Yang, L.

AU - Zhao, C. Z.

PY - 2019/9/15

Y1 - 2019/9/15

N2 - In this work, the effects of biased irradiation on solution-processed and atomic layer deposited (ALD) AlOx thin films MOS capacitors were investigated by an on-site technique. The devices were irradiated by a 662-KeV Cs137 γ-ray radiation source under different positive/negative gate biases. The radiation time was up to 105 s and the total dose was around 92 Gy. It has been found that radiation could result in reversibility of flat-band voltage shifts (ΔVFB) of solution-processed AlOx MOS capacitors, which were further analyzed through calculating the radiation induced oxide traps (ΔNot) in AlOx thin film and interface traps at AlOx/Si interface (ΔNit). Additionally, solution-processed AlOx MOS capacitors exhibit more radiation induced charges compared to those fabricated by ALD, which indicates that solution-processed AlOx thin films contain abundant precursor impurities and bonded oxygen.

AB - In this work, the effects of biased irradiation on solution-processed and atomic layer deposited (ALD) AlOx thin films MOS capacitors were investigated by an on-site technique. The devices were irradiated by a 662-KeV Cs137 γ-ray radiation source under different positive/negative gate biases. The radiation time was up to 105 s and the total dose was around 92 Gy. It has been found that radiation could result in reversibility of flat-band voltage shifts (ΔVFB) of solution-processed AlOx MOS capacitors, which were further analyzed through calculating the radiation induced oxide traps (ΔNot) in AlOx thin film and interface traps at AlOx/Si interface (ΔNit). Additionally, solution-processed AlOx MOS capacitors exhibit more radiation induced charges compared to those fabricated by ALD, which indicates that solution-processed AlOx thin films contain abundant precursor impurities and bonded oxygen.

KW - AlO

KW - Biased γ-ray radiation stress stability

KW - High-k gate dielectric

KW - Solution-processed

UR - http://www.scopus.com/inward/record.url?scp=85071936720&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2019.111113

DO - 10.1016/j.mee.2019.111113

M3 - Article

AN - SCOPUS:85071936720

SN - 0167-9317

VL - 217

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 111113

ER -