Beam alignment in Laser Interference Nanolithography

Hao Song*, Jia Xu, Yanyan Liu, Haiyan Pan, Zhengxun Song, Zhankun Weng, Zhen Hu, Zuobin Wang, Jin Zhang, Yong Yue, Dayou Li

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

Abstract

Laser Interference Nanolithography (LInL) can produce nanostructure patterns by two or more coherent laser beams on the sample surface. In LInL, incident positions, incident angles and space angles of beams determine the lithography pattern and exposure area. In this work, a method for beam alignment in LInL was described. The method is based on the detection of the light spot which is formed by the incident beam on the sample surface, obtaining the parameters of the light spot by image processing including the incident position, incident angle and space angle of the beam. Proper system alignment can eliminate errors of beam incidence to ensure that the final lithography pattern and the exposure area can comply with the design. Computer simulation and experimental results have shown the accuracy, repeatability and limitation of the method, and it can be used in laser interference nanolithography.

Original languageEnglish
Title of host publication2nd International Conference on Information Science and Engineering, ICISE2010 - Proceedings
Pages1065-1068
Number of pages4
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2nd International Conference on Information Science and Engineering, ICISE2010 - Hangzhou, China
Duration: 4 Dec 20106 Dec 2010

Publication series

Name2nd International Conference on Information Science and Engineering, ICISE2010 - Proceedings

Conference

Conference2nd International Conference on Information Science and Engineering, ICISE2010
Country/TerritoryChina
CityHangzhou
Period4/12/106/12/10

Keywords

  • Beam alignment
  • Detection
  • Laser interference nanolithography
  • Light spot

Cite this