Atomic layer deposition of HfO2 gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs

Qifeng Lu; Sang Lam; Yifei Mu; Ce Zhou Zhao; Yinchao Zhao; Yuxiao Fang; Li Yang; Steve Taylor; Paul R. Chalker

doi:10.1109/NANO.2017.8117442

Atomic layer deposition of HfO₂ gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs

Qifeng Lu, Sang Lam, Yifei Mu, Ce Zhou Zhao, Yinchao Zhao, Yuxiao Fang, Li Yang, Steve Taylor, Paul R. Chalker

University of Liverpool

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

HfO₂ gate dielectric is fabricated by atomic layer deposition on an n-type germanium (Ge) substrate to form p-type Ge MOS capacitors. Three solution-based chemical treatments of the Ge surface using propanethiol, octanethiol and (NH₄)₂S solutions respectively as well as post-metallization annealing are investigated to improve the interface quality of HfO2 gate dielectric on the Ge substrate. Experimental results show improvement in the electrical characteristics of the Ge MOS devices with a 20-nm HfO₂ gate dielectric. In particular, the gate leakage current density is improved by one order of magnitude using the straightforward processing techniques.

Original language	English
Title of host publication	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	491-494
Number of pages	4
ISBN (Electronic)	9781509030286
DOIs	https://doi.org/10.1109/NANO.2017.8117442
Publication status	Published - 21 Nov 2017
Event	17th IEEE International Conference on Nanotechnology, NANO 2017 - Pittsburgh, United States Duration: 25 Jul 2017 → 28 Jul 2017

Publication series

Name	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

Conference

Conference	17th IEEE International Conference on Nanotechnology, NANO 2017
Country/Territory	United States
City	Pittsburgh
Period	25/07/17 → 28/07/17

Access to Document

10.1109/NANO.2017.8117442

Cite this

Lu, Q., Lam, S., Mu, Y., Zhao, C. Z., Zhao, Y., Fang, Y., Yang, L., Taylor, S., & Chalker, P. R. (2017). Atomic layer deposition of HfO₂ gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs. In 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017 (pp. 491-494). Article 8117442 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2017.8117442

Lu, Qifeng ; Lam, Sang ; Mu, Yifei et al. / Atomic layer deposition of HfO₂ gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs. 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 491-494 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017).

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title = "Atomic layer deposition of HfO2 gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs",

abstract = "HfO2 gate dielectric is fabricated by atomic layer deposition on an n-type germanium (Ge) substrate to form p-type Ge MOS capacitors. Three solution-based chemical treatments of the Ge surface using propanethiol, octanethiol and (NH4)2S solutions respectively as well as post-metallization annealing are investigated to improve the interface quality of HfO2 gate dielectric on the Ge substrate. Experimental results show improvement in the electrical characteristics of the Ge MOS devices with a 20-nm HfO2 gate dielectric. In particular, the gate leakage current density is improved by one order of magnitude using the straightforward processing techniques.",

author = "Qifeng Lu and Sang Lam and Yifei Mu and Zhao, {Ce Zhou} and Yinchao Zhao and Yuxiao Fang and Li Yang and Steve Taylor and Chalker, {Paul R.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th IEEE International Conference on Nanotechnology, NANO 2017 ; Conference date: 25-07-2017 Through 28-07-2017",

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doi = "10.1109/NANO.2017.8117442",

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Lu, Q , Lam, S, Mu, Y, Zhao, CZ, Zhao, Y , Fang, Y , Yang, L, Taylor, S & Chalker, PR 2017, Atomic layer deposition of HfO₂ gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs. in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017., 8117442, 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, Institute of Electrical and Electronics Engineers Inc., pp. 491-494, 17th IEEE International Conference on Nanotechnology, NANO 2017, Pittsburgh, United States, 25/07/17. https://doi.org/10.1109/NANO.2017.8117442

Atomic layer deposition of HfO₂ gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs. / Lu, Qifeng ; Lam, Sang; Mu, Yifei et al.
2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 491-494 8117442 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T1 - Atomic layer deposition of HfO2 gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs

AU - Lu, Qifeng

AU - Lam, Sang

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AU - Zhao, Yinchao

AU - Fang, Yuxiao

AU - Yang, Li

AU - Taylor, Steve

AU - Chalker, Paul R.

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N2 - HfO2 gate dielectric is fabricated by atomic layer deposition on an n-type germanium (Ge) substrate to form p-type Ge MOS capacitors. Three solution-based chemical treatments of the Ge surface using propanethiol, octanethiol and (NH4)2S solutions respectively as well as post-metallization annealing are investigated to improve the interface quality of HfO2 gate dielectric on the Ge substrate. Experimental results show improvement in the electrical characteristics of the Ge MOS devices with a 20-nm HfO2 gate dielectric. In particular, the gate leakage current density is improved by one order of magnitude using the straightforward processing techniques.

AB - HfO2 gate dielectric is fabricated by atomic layer deposition on an n-type germanium (Ge) substrate to form p-type Ge MOS capacitors. Three solution-based chemical treatments of the Ge surface using propanethiol, octanethiol and (NH4)2S solutions respectively as well as post-metallization annealing are investigated to improve the interface quality of HfO2 gate dielectric on the Ge substrate. Experimental results show improvement in the electrical characteristics of the Ge MOS devices with a 20-nm HfO2 gate dielectric. In particular, the gate leakage current density is improved by one order of magnitude using the straightforward processing techniques.

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Lu Q , Lam S, Mu Y, Zhao CZ, Zhao Y , Fang Y et al. Atomic layer deposition of HfO₂ gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs. In 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 491-494. 8117442. (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017). doi: 10.1109/NANO.2017.8117442