TY - JOUR
T1 - Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications
AU - Xu, Wangying
AU - Peng, Tao
AU - Zhuo, Shuangmu
AU - Lin, Qiubao
AU - Huang, Weicheng
AU - Li, Yujia
AU - Xu, Fang
AU - Zhao, Chun
AU - Zhu, Deliang
N1 - Funding Information:
This research was funded by the National Natural Science Foundation of China (61704111, 12074263 and 62001308), the Scientific Research Starting Foundation of Jimei University (C622124), and the Natural Science Foundation of Top Talent of SZTU (20200219).
Publisher Copyright:
© 2022 by the authors.
PY - 2022/11
Y1 - 2022/11
N2 - Solution-grown indium oxide (In2O3) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In2O3 TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam’s theory, among potential dopants, phosphorus (P) has a large dopant–oxygen bonding strength (EM-O) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped In2O3 (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high EM-O and L is promising for emerging oxide TFTs.
AB - Solution-grown indium oxide (In2O3) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In2O3 TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam’s theory, among potential dopants, phosphorus (P) has a large dopant–oxygen bonding strength (EM-O) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped In2O3 (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high EM-O and L is promising for emerging oxide TFTs.
KW - crystalline oxide semiconductors
KW - phosphorus doped indium oxide
KW - solution-grown
KW - thin-film transistors
UR - http://www.scopus.com/inward/record.url?scp=85141627857&partnerID=8YFLogxK
U2 - 10.3390/ijms232112912
DO - 10.3390/ijms232112912
M3 - Article
C2 - 36361699
AN - SCOPUS:85141627857
SN - 1661-6596
VL - 23
JO - International Journal of Molecular Sciences
JF - International Journal of Molecular Sciences
IS - 21
M1 - 12912
ER -