Anomalous capacitance-voltage hysteresis in MOS devices with ZrO2 and HfO2 dielectrics

Qifeng Lu; Yanfei Qi; Ce Zhou Zhao; Chun Zhao; Stephen Taylor; Paul R. Chalker

doi:10.1109/ISNE.2016.7543290

Anomalous capacitance-voltage hysteresis in MOS devices with ZrO₂ and HfO₂ dielectrics

Qifeng Lu, Yanfei Qi, Ce Zhou Zhao^*, Chun Zhao, Stephen Taylor, Paul R. Chalker

^*Corresponding author for this work

School of Advanced Technology

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO₂ and HfO₂ oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide a possible explanation.

Original language	English
Title of host publication	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509024391
DOIs	https://doi.org/10.1109/ISNE.2016.7543290
Publication status	Published - 12 Aug 2016
Event	5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan, Province of China Duration: 4 May 2016 → 6 May 2016

Publication series

Name	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

Conference

Conference	5th International Symposium on Next-Generation Electronics, ISNE 2016
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/05/16 → 6/05/16

Keywords

capacitance-voltage characteristics
hysteresis
interface dipoles

Access to Document

10.1109/ISNE.2016.7543290

Cite this

Lu, Q., Qi, Y., Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (2016). Anomalous capacitance-voltage hysteresis in MOS devices with ZrO₂ and HfO₂ dielectrics. In 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 Article 7543290 (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2016.7543290

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title = "Anomalous capacitance-voltage hysteresis in MOS devices with ZrO2 and HfO2 dielectrics",

abstract = "Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide a possible explanation.",

keywords = "capacitance-voltage characteristics, hysteresis, interface dipoles",

author = "Qifeng Lu and Yanfei Qi and Zhao, {Ce Zhou} and Chun Zhao and Stephen Taylor and Chalker, {Paul R.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 5th International Symposium on Next-Generation Electronics, ISNE 2016 ; Conference date: 04-05-2016 Through 06-05-2016",

year = "2016",

month = aug,

day = "12",

doi = "10.1109/ISNE.2016.7543290",

language = "English",

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Lu, Q , Qi, Y, Zhao, CZ, Zhao, C, Taylor, S & Chalker, PR 2016, Anomalous capacitance-voltage hysteresis in MOS devices with ZrO₂ and HfO₂ dielectrics. in 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016., 7543290, 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016, Institute of Electrical and Electronics Engineers Inc., 5th International Symposium on Next-Generation Electronics, ISNE 2016, Hsinchu, Taiwan, Province of China, 4/05/16. https://doi.org/10.1109/ISNE.2016.7543290

Anomalous capacitance-voltage hysteresis in MOS devices with ZrO₂ and HfO₂ dielectrics. / Lu, Qifeng ; Qi, Yanfei; Zhao, Ce Zhou et al.
2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7543290 (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AU - Qi, Yanfei

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AU - Chalker, Paul R.

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AB - Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide a possible explanation.

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Lu Q , Qi Y, Zhao CZ, Zhao C, Taylor S, Chalker PR. Anomalous capacitance-voltage hysteresis in MOS devices with ZrO₂ and HfO₂ dielectrics. In 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7543290. (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016). doi: 10.1109/ISNE.2016.7543290