TY - GEN
T1 - An artificial synaptic thin-film transistor based on 2D MXene-TiO2
AU - Cao, Y. X.
AU - Zhao, C.
AU - Mitrovic, I. Z.
AU - Liu, Y. N.
AU - Yang, L.
AU - Van Zalinge, H.
AU - Zhao, C. Z.
N1 - Funding Information:
ACKNOWLEDGMENT This research was funded in part by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China Program (19KJB510059), Natural Science Foundation of Jiangsu Province of China (BK20180242), IZM acknowledges British Council UKIERI F.No.184-1/2018(IC) project, the Suzhou Science and Technology Development Planning Project: Key Industrial Technology Innovation (SYG201924), and the Key Program Special Fund in XJTLU (KSF-P-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A-07, KSF-A-18).
Publisher Copyright:
© 2021 IEEE.
PY - 2021/9/1
Y1 - 2021/9/1
N2 - MXenes, a new class of two-dimensional transition metal carbides and nitrides, has the potential as a floating gate in storage devices due to its inherent characteristics such as two-dimensional structure, high density of states and high work function. Based on synthetic MXene and TiO2 generated by surface oxidation, this study used a low-energy, pollution-free and low-cost aqueous solution method to fabricate artificial synaptic thin-film transistors. Moreover, we tested its synaptic properties under light stimulation. Successful simulations include excitatory postsynaptic current, spike number dependence plasticity, spike frequency dependence plasticity and spike width dependence plasticity, and proposed a potential application: high-pass filter. This MXene-based artificial synaptic device serves as a data storage medium to inspire the application of future storage devices.
AB - MXenes, a new class of two-dimensional transition metal carbides and nitrides, has the potential as a floating gate in storage devices due to its inherent characteristics such as two-dimensional structure, high density of states and high work function. Based on synthetic MXene and TiO2 generated by surface oxidation, this study used a low-energy, pollution-free and low-cost aqueous solution method to fabricate artificial synaptic thin-film transistors. Moreover, we tested its synaptic properties under light stimulation. Successful simulations include excitatory postsynaptic current, spike number dependence plasticity, spike frequency dependence plasticity and spike width dependence plasticity, and proposed a potential application: high-pass filter. This MXene-based artificial synaptic device serves as a data storage medium to inspire the application of future storage devices.
KW - MXene
KW - synaptic
KW - thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=85118394905&partnerID=8YFLogxK
U2 - 10.1109/EuroSOI-ULIS53016.2021.9560172
DO - 10.1109/EuroSOI-ULIS53016.2021.9560172
M3 - Conference Proceeding
AN - SCOPUS:85118394905
T3 - 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
BT - 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
Y2 - 1 September 2021 through 3 September 2021
ER -