All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs

Ruize Sun*, Yung C. Liang, Yee Chia Yeo, Cezhou Zhao, Wanjun Chen, Bo Zhang

*Corresponding author for this work

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Abstract

This article reports the Au-free GaN power integration platform and a complete integration scheme from devices to functional subcircuits and to application-oriented GaN converter ICs. The design and experimental demonstration of all-GaN dc-dc converter IC with high level of integration is presented. Through the developed GaN power integration platform, devices are monolithically integrated and functional subcircuits are demonstrated, which have realized expected application-oriented functions and are feasible for high-level integration. The all-GaN converter IC with monolithically integrated high-side gate driver, pulse-width modulation (PWM) feedback controller, and over-current protection circuits are proposed, numerically analyzed, experimentally demonstrated, and characterized. It can realize stable 10-V output with constant output ripples below 4% from 15-30-V input line voltage. Stable output with constant ripples can be maintained according to the designed feedback control when input and load conditions are abruptly changed. When subjected to over-current incident, the converter IC can be protected according to the desired over-current threshold values within one duty cycle period. The developed all-GaN power integration platform, together with functional subcircuits and dc-dc converter IC, can be a practical verification of all-GaN IC scheme oriented toward power conversion application, and a useful reference for all-GaN IC designs.

Original languageEnglish
Article number8863352
Pages (from-to)31-41
Number of pages11
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume8
Issue number1
DOIs
Publication statusPublished - Mar 2020

Keywords

  • AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs)
  • all GaN
  • dc-dc converter
  • monolithic integration
  • power conversion

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Sun, R., Liang, Y. C., Yeo, Y. C., Zhao, C., Chen, W., & Zhang, B. (2020). All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 31-41. Article 8863352. https://doi.org/10.1109/JESTPE.2019.2946418