@inproceedings{2cfa70f122a54779b95927d19cf59dce,
title = "Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature",
abstract = "In this work, the Al/GO/Si/Al RRAM device was fabricated with solution-processed graphene oxide (GO) thin film at low temperature (50 ?). A superior electrical performance and stable operation of the device has been achieved showing typical bipolar resistive switching characteristics with operation voltage lower than 3 V, retention property sustained over 104 s and endurance over 102 cycles. The results suggest that the solution-processed GO thin films exhibit great potential for use in the flexible device.",
keywords = "graphene oxide, low fabrication temperature, solution-processed method",
author = "Shen, {Z. J.} and C. Zhao and Zhao, {C. Z.} and Mitrovic, {I. Z.} and L. Yang and Xu, {W. Y.} and Lim, {E. G.} and T. Luo and Huang, {Y. B.}",
note = "Funding Information: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 ; Conference date: 01-04-2019 Through 03-04-2019",
year = "2019",
month = apr,
doi = "10.1109/EUROSOI-ULIS45800.2019.9041877",
language = "English",
series = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",
}