TY - JOUR
T1 - AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation
AU - Cao, Pingyu
AU - Zhao, Kepeng
AU - Zalinge, Harm Van
AU - Zhang, Ping
AU - Cui, Miao
AU - Xue, Fei
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2024/10/28
Y1 - 2024/10/28
N2 - This paper presents a high gain voltage amplifier based on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with monolithically integrated enhancement-mode (E-mode) and depletion-mode (D-mode) devices. The GaN amplifier consists of differential pair based on E-mode devices, active loads based on D-mode devices and a current source, and the influence of the current source on voltage gain was evaluated. The proposed amplifier demonstrates a high gain and high unity-gain frequency at both room temperature (25 °C) and high-temperature (250 °C). The gain is 37.4 dB at room temperature, slightly decreasing to 32.7 dB when the temperature rises to 250 °C. Moreover, the power consumption reported in this work is decreased to 60 mW by reducing the static current, and the chip area of this work is reduced to 2.806×105μ m2. These results indicate that the proposed amplifier is suitable for small signal sensing or driving circuits, which would promise high power density for GaN-on-Si integration circuits with high-temperature operation.
AB - This paper presents a high gain voltage amplifier based on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with monolithically integrated enhancement-mode (E-mode) and depletion-mode (D-mode) devices. The GaN amplifier consists of differential pair based on E-mode devices, active loads based on D-mode devices and a current source, and the influence of the current source on voltage gain was evaluated. The proposed amplifier demonstrates a high gain and high unity-gain frequency at both room temperature (25 °C) and high-temperature (250 °C). The gain is 37.4 dB at room temperature, slightly decreasing to 32.7 dB when the temperature rises to 250 °C. Moreover, the power consumption reported in this work is decreased to 60 mW by reducing the static current, and the chip area of this work is reduced to 2.806×105μ m2. These results indicate that the proposed amplifier is suitable for small signal sensing or driving circuits, which would promise high power density for GaN-on-Si integration circuits with high-temperature operation.
KW - amplifier
KW - high-temperature
KW - metal-insulator-semiconductor high-electron-mobility transistors
KW - monolithic integration GaN-on-Si circuits
UR - http://www.scopus.com/inward/record.url?scp=85208275269&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2024.3486454
DO - 10.1109/JEDS.2024.3486454
M3 - Article
AN - SCOPUS:85208275269
SN - 2168-6734
VL - 12
SP - 981
EP - 987
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
M1 - 12
ER -