Adsorption and manipulation of endohedral and higher fullerenes on Si(100)-2×1

M. J. Butcher*, J. W. Nolan, M. R.C. Hunt, P. H. Beton, L. Dunsch, P. Kuran, P. Georgi, T. J.S. Dennis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The adsorption of the endohedral fullerene, La@C82, and the higher fullerene, C84, on Si(100)-2×1 is investigated using a scanning tunneling microscope (STM) operating in ultrahigh vacuum. Both molecules are found to adsorb directly above the dimer rows that are formed on the Si(100)-2×1 surface, as well as in trough sites midway between dimer rows. Adsorption above dimer rows, not observed for C60, is attributed to the larger radius of curvature of these fullerene cages. The response of La@C82 to manipulation by the tip of the STM is also investigated. Molecules in either adsorption site may be manipulated with a threshold gap impedance ∼1.0 GΩ. Owing to a near-commensurability between the molecular diameter of La@C82 and the lattice constant of the Si(100) surface, close-packed arrangements of molecules may be formed.

Original languageEnglish
Article number125413
Pages (from-to)1254131-1254135
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number12
Publication statusPublished - Mar 2003
Externally publishedYes

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