Achieving Reliable and Ultrafast Memristors via Artificial Filaments in Silk Fibroin

Zishun Li, Jiaqi Wang, Lanxin Xu, Li Wang, Hongpeng Shang, Haoting Ying, Yingjie Zhao, Liaoyong Wen*, Chengchen Guo*, Xiaorui Zheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The practical implementation of memristors in neuromorphic computing and biomimetic sensing suffers from unexpected temporal and spatial variations due to the stochastic formation and rupture of conductive filaments (CFs). Here, the biocompatible silk fibroin (SF) is patterned with an on-demand nanocone array by using thermal scanning probe lithography (t-SPL) to guide and confine the growth of CFs in the silver/SF/gold (Ag/SF/Au) memristor. Benefiting from the high fabrication controllability, cycle-to-cycle (temporal) standard deviation of the set voltage for the structured memristor is significantly reduced by ≈95.5% (from 1.535 to 0.0686 V) and the device-to-device (spatial) standard deviation is also reduced to 0.0648 V. Besides, the statistical relationship between the structural nanocone design and the resultant performance is confirmed, optimizing at the small operation voltage (≈0.5 V) and current (100 nA), ultrafast switching speed (sub-100 ns), large on/off ratio (104), and the smallest switching slope (SS < 0.01 mV dec−1). Finally, the short-term plasticity and leaky integrated-and-fire behavior are emulated, and a reliable thermal nociceptor system is demonstrated for practical neuromorphic applications.

Original languageEnglish
Article number2308843
JournalAdvanced Materials
Volume36
Issue number4
DOIs
Publication statusPublished - 25 Jan 2024
Externally publishedYes

Keywords

  • artificial conductive filaments
  • biocompatible silk fibroin
  • temporal and spatial variations
  • thermal scanning probe lithography
  • threshold memristors

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