A semi-automated real-time gamma radiation response measurement system for semiconductor device characterisation

Yifei Mu, Yanfei Qi, Sang Lam, Cezhou Zhao

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

1 Citation (Scopus)

Abstract

This paper describes a semi-automated measurement system for the electrical characterization of the real-time radiation response of electronic devices in the form of semiconductor chips or wafer pieces under gamma irradiation. In-situ I-V and C-V measurements can be performed while the devices are continuously subject to gamma radiation. The system requires no advanced equipment but standard measurement instruments and apparatus. The testing system is feasible for laboratory-scale implementation while keeping the radiation risk of the human operator to a minimum. Measurement results of MOS capacitors are reported using such a system.

Original languageEnglish
Title of host publication2015 IEEE 12th International Conference on Electronic Measurement and Instruments, ICEMI 2015
EditorsCui Jianping, Wu Juan
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages726-730
Number of pages5
ISBN (Electronic)9781479976195
DOIs
Publication statusPublished - 16 Jun 2016
Event12th IEEE International Conference on Electronic Measurement and Instruments, ICEMI 2015 - Qingdao, China
Duration: 16 Jul 201518 Jul 2015

Publication series

Name2015 IEEE 12th International Conference on Electronic Measurement and Instruments, ICEMI 2015
Volume2

Conference

Conference12th IEEE International Conference on Electronic Measurement and Instruments, ICEMI 2015
Country/TerritoryChina
CityQingdao
Period16/07/1518/07/15

Keywords

  • I-V and C-V characteristics
  • MOS capacitors
  • automated measurement system
  • gamma irradiation
  • radiation response
  • real-time radiation effects

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