A promising method to improve the bias-stress and biased-radiation-stress stabilities of solution-processed AlO_x thin films

The effects of hydrogen peroxide (H₂O₂) on the device properties and stabilities of solution-processed AlO_x metal-oxide-semiconductor capacitors (MOSCAPs) were investigated. It is demonstrated that H₂O₂ is a strong oxidizer to decompose precursor residuals, reduce oxygen vacancy (V_o) and defects density of solution-processed AlO_x thin films. The interface quality and the bias-stress (BS) stability of AlO_x MOSCAPs were improved by employing H₂O₂. Furthermore, through carrying out on-site measurements, 7.5 M H₂O₂ AlO_x MOSCAPs exhibited ignorable radiation-induced oxide traps and interface traps under biased-radiation-stress (BRS) with a total dose up to 42 Gy (SiO₂). The 7.5 M H₂O₂ AlO_x MOSCAPs also demonstrate the ability to recover under radiation after the bias was interrupted. The reduced number of V_o and high AlO_x concentration of 7.5 M H₂O₂ AlO_x could suppress the radiation-induced trapping/de-trapping behavior among the AlO_x bulk and the breaking of Si–H bonds at the AlO_x/Si interface. Besides, through biased-illumination-stress (BIS) measurements, the breaking of Si–H bonds under negative biased-radiation-stress (NBRS) was further proved. The results demonstrate that employing H₂O₂ in the solution-process is simple and effective; it has significant potential to improve the stabilities of large-area electronics for nuclear and aerospace applications.