A Monolithically Integrated 3 Transistor Voltage Reference Generator Based on p GaN HEMTs Technology

This paper proposes a monolithically integrated voltage reference generator that consists of two depletion-mode and one enhancement-mode GaN HEMTs, capable of operating at various supply voltages. The proposed work is based on p-type GaN gate technology that will decrease the power loss of GaN devices. A stable reference voltage of 2.1 V was experimentally achieved with a high line sensitivity (0.2 %/V). Moreover, the power supply rejection ratio is larger than 42 dB at a frequency variation from 100 kHz to 1 MHz. The proposed circuit exhibits a small power consumption, and the occupied chip area of the GaN reference generator is less than 0.1 mm2. This work demonstrates a stable and effective voltage reference generator, which would be conductive to implement complex integrated circuits.