A monolithic GaN driver with a deadtime generator (DTG) for high-temperature (HT) GaN DC-DC buck converters

Miao Cui*, Yuhao Zhu, Pingyu Cao, Ang Li, Qinglei Bu, Ivona Z. Mitrovic, Xujun Su*, Yinchao Zhao, Huiqing Wen, Wen Liu, Cezhou Zhao

*Corresponding author for this work

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Abstract

This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half-bridge DC-DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement-mode GaN MIS-HEMTs process. The integrated DTG converter can operate at 250°C with a large gate swing of 10 V, and it exhibits a maximum efficiency of 80% at high temperatures, with VIN= 30 V at 100 kHz. The monolithic GaN DTG driver requires one control signal and generates a deadtime of fewer than 0.13 µs at high temperatures up to 250°C. The proposed DTG converter is compared to an integrated GaN converter without DTG (w/o) under various conditions. At high temperatures, the optimized GaN DTG converter shows better performance than the GaN converter w/o at high load currents, in terms of smaller voltage overshoots and better efficiency as well. This work demonstrates a simple GaN deadtime method for high temperature (HT) GaN power converters.

Original languageEnglish
Pages (from-to)1582-1594
Number of pages13
JournalIET Power Electronics
Volume16
DOIs
Publication statusAccepted/In press - 2023

Keywords

  • DC-DC power convertors
  • MOS integrated circuits
  • wide band gap semiconductors

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Cui, M., Zhu, Y., Cao, P., Li, A., Bu, Q., Mitrovic, I. Z., Su, X., Zhao, Y., Wen, H., Liu, W., & Zhao, C. (Accepted/In press). A monolithic GaN driver with a deadtime generator (DTG) for high-temperature (HT) GaN DC-DC buck converters. IET Power Electronics, 16, 1582-1594. https://doi.org/10.1049/pel2.12498