A monolithic GaN driver with a deadtime generator (DTG) for high-temperature (HT) GaN DC-DC buck converters

Miao Cui; Yuhao Zhu; Pingyu Cao; Ang Li; Qinglei Bu; Ivona Z. Mitrovic; Xujun Su; Yinchao Zhao; Huiqing Wen; Wen Liu; Cezhou Zhao

doi:10.1049/pel2.12498

A monolithic GaN driver with a deadtime generator (DTG) for high-temperature (HT) GaN DC-DC buck converters

Miao Cui^*, Yuhao Zhu, Pingyu Cao, Ang Li, Qinglei Bu, Ivona Z. Mitrovic, Xujun Su^*, Yinchao Zhao, Huiqing Wen, Wen Liu, Cezhou Zhao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half-bridge DC-DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement-mode GaN MIS-HEMTs process. The integrated DTG converter can operate at 250°C with a large gate swing of 10 V, and it exhibits a maximum efficiency of 80% at high temperatures, with V_IN= 30 V at 100 kHz. The monolithic GaN DTG driver requires one control signal and generates a deadtime of fewer than 0.13 µs at high temperatures up to 250°C. The proposed DTG converter is compared to an integrated GaN converter without DTG (w/o) under various conditions. At high temperatures, the optimized GaN DTG converter shows better performance than the GaN converter w/o at high load currents, in terms of smaller voltage overshoots and better efficiency as well. This work demonstrates a simple GaN deadtime method for high temperature (HT) GaN power converters.

Original language	English
Pages (from-to)	1582-1594
Number of pages	13
Journal	IET Power Electronics
Volume	16
DOIs	https://doi.org/10.1049/pel2.12498
Publication status	Accepted/In press - 2023

Keywords

DC-DC power convertors
MOS integrated circuits
wide band gap semiconductors

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10.1049/pel2.12498

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Cui, M., Zhu, Y., Cao, P., Li, A., Bu, Q., Mitrovic, I. Z., Su, X., Zhao, Y., Wen, H., Liu, W., & Zhao, C. (Accepted/In press). A monolithic GaN driver with a deadtime generator (DTG) for high-temperature (HT) GaN DC-DC buck converters. IET Power Electronics, 16, 1582-1594. https://doi.org/10.1049/pel2.12498

@article{9a7ab4c7140642ca9ac951996f320874,

title = "A monolithic GaN driver with a deadtime generator (DTG) for high-temperature (HT) GaN DC-DC buck converters",

abstract = "This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half-bridge DC-DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement-mode GaN MIS-HEMTs process. The integrated DTG converter can operate at 250°C with a large gate swing of 10 V, and it exhibits a maximum efficiency of 80% at high temperatures, with VIN= 30 V at 100 kHz. The monolithic GaN DTG driver requires one control signal and generates a deadtime of fewer than 0.13 µs at high temperatures up to 250°C. The proposed DTG converter is compared to an integrated GaN converter without DTG (w/o) under various conditions. At high temperatures, the optimized GaN DTG converter shows better performance than the GaN converter w/o at high load currents, in terms of smaller voltage overshoots and better efficiency as well. This work demonstrates a simple GaN deadtime method for high temperature (HT) GaN power converters.",

keywords = "DC-DC power convertors, MOS integrated circuits, wide band gap semiconductors",

author = "Miao Cui and Yuhao Zhu and Pingyu Cao and Ang Li and Qinglei Bu and Mitrovic, {Ivona Z.} and Xujun Su and Yinchao Zhao and Huiqing Wen and Wen Liu and Cezhou Zhao",

note = "Funding Information: This work was supported by Suzhou Science and Technology program (SYG201923 and SYG202131), the Key Program Special Fund in XJTLU (KSF‐A‐05, KSF‐A‐12 and KSF‐T‐07), and the XJTLU Research Development Fund (PGRS13‐03‐01 and PGRS1912003, RDF‐20‐02‐62, RDF‐21‐02‐031). BE2020004‐1, 2020 Key R&D Program (Industry Foresight and Key Core Technologies) of Jiangsu Province. I.Z. Mitrovic acknowledges British Council UKIERI project no. IND/CONT/G/17‐18/18 & F.No.184‐1/2018(IC); as well as EPSRC funded projects: UKRI GCRF GIAA award and EP/P510981/1. Publisher Copyright: {\textcopyright} 2023 The Authors. IET Power Electronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.",

year = "2023",

doi = "10.1049/pel2.12498",

language = "English",

volume = "16",

pages = "1582--1594",

journal = "IET Power Electronics",

issn = "1755-4535",

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TY - JOUR

T1 - A monolithic GaN driver with a deadtime generator (DTG) for high-temperature (HT) GaN DC-DC buck converters

AU - Cui, Miao

AU - Zhu, Yuhao

AU - Cao, Pingyu

AU - Li, Ang

AU - Bu, Qinglei

AU - Mitrovic, Ivona Z.

AU - Su, Xujun

AU - Zhao, Yinchao

AU - Wen, Huiqing

AU - Liu, Wen

AU - Zhao, Cezhou

N1 - Funding Information: This work was supported by Suzhou Science and Technology program (SYG201923 and SYG202131), the Key Program Special Fund in XJTLU (KSF‐A‐05, KSF‐A‐12 and KSF‐T‐07), and the XJTLU Research Development Fund (PGRS13‐03‐01 and PGRS1912003, RDF‐20‐02‐62, RDF‐21‐02‐031). BE2020004‐1, 2020 Key R&D Program (Industry Foresight and Key Core Technologies) of Jiangsu Province. I.Z. Mitrovic acknowledges British Council UKIERI project no. IND/CONT/G/17‐18/18 & F.No.184‐1/2018(IC); as well as EPSRC funded projects: UKRI GCRF GIAA award and EP/P510981/1. Publisher Copyright: © 2023 The Authors. IET Power Electronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.

PY - 2023

Y1 - 2023

N2 - This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half-bridge DC-DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement-mode GaN MIS-HEMTs process. The integrated DTG converter can operate at 250°C with a large gate swing of 10 V, and it exhibits a maximum efficiency of 80% at high temperatures, with VIN= 30 V at 100 kHz. The monolithic GaN DTG driver requires one control signal and generates a deadtime of fewer than 0.13 µs at high temperatures up to 250°C. The proposed DTG converter is compared to an integrated GaN converter without DTG (w/o) under various conditions. At high temperatures, the optimized GaN DTG converter shows better performance than the GaN converter w/o at high load currents, in terms of smaller voltage overshoots and better efficiency as well. This work demonstrates a simple GaN deadtime method for high temperature (HT) GaN power converters.

AB - This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half-bridge DC-DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement-mode GaN MIS-HEMTs process. The integrated DTG converter can operate at 250°C with a large gate swing of 10 V, and it exhibits a maximum efficiency of 80% at high temperatures, with VIN= 30 V at 100 kHz. The monolithic GaN DTG driver requires one control signal and generates a deadtime of fewer than 0.13 µs at high temperatures up to 250°C. The proposed DTG converter is compared to an integrated GaN converter without DTG (w/o) under various conditions. At high temperatures, the optimized GaN DTG converter shows better performance than the GaN converter w/o at high load currents, in terms of smaller voltage overshoots and better efficiency as well. This work demonstrates a simple GaN deadtime method for high temperature (HT) GaN power converters.

KW - DC-DC power convertors

KW - MOS integrated circuits

KW - wide band gap semiconductors

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U2 - 10.1049/pel2.12498

DO - 10.1049/pel2.12498

M3 - Article

AN - SCOPUS:85152904056

SN - 1755-4535

VL - 16

SP - 1582

EP - 1594

JO - IET Power Electronics

JF - IET Power Electronics

ER -

A monolithic GaN driver with a deadtime generator (DTG) for high-temperature (HT) GaN DC-DC buck converters

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