TY - GEN
T1 - A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters
AU - Li, Xueteng
AU - Cui, Miao
AU - Liu, Wen
N1 - Funding Information:
The work of Hua Fan was supported by the National Natural Science Foundation of China (NSFC) under Grant 61771111
Funding Information:
This work was supported by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(18KJB470023), the Key Program Special Fund in XJTLU (KSF-A-05) (KSF-A-12) and the Suzhou Science and Technology program (SYG201728).
Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have superior advantages like low leakage current and large gate swing. To fully use those advantages, this paper proposes a monolithic sawtooth generator circuit, which can generate a 100 kHz sawtooth waveform with a peak-to-peak voltage of around 3.5 V under 10 V power supply. The integrated circuit is calibrated and simulated by Advanced Design System (ADS). Good agreement between simulations and experimental results indicates the feasibility of GaN MIS-HEMTs on high power electronics application.
AB - AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have superior advantages like low leakage current and large gate swing. To fully use those advantages, this paper proposes a monolithic sawtooth generator circuit, which can generate a 100 kHz sawtooth waveform with a peak-to-peak voltage of around 3.5 V under 10 V power supply. The integrated circuit is calibrated and simulated by Advanced Design System (ADS). Good agreement between simulations and experimental results indicates the feasibility of GaN MIS-HEMTs on high power electronics application.
KW - E-mode AlGaN/GaN MIS-HEMTs
KW - integrated circuits
KW - sawtooth generator
UR - http://www.scopus.com/inward/record.url?scp=85071442159&partnerID=8YFLogxK
U2 - 10.1109/ICICDT.2019.8790928
DO - 10.1109/ICICDT.2019.8790928
M3 - Conference Proceeding
AN - SCOPUS:85071442159
T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Y2 - 17 June 2019 through 19 June 2019
ER -