TY - GEN
T1 - A 5 to 50 V, -25 to 225 °C, 0.065%/°C GaN MIS-HEMT Monolithic Compact 2T Voltage Reference
AU - Li, Ziqian
AU - Shen, Yi
AU - Li, Ang
AU - Liu, Wen
N1 - Funding Information:
ACKNOWLEDGEMENT This work was supported in part by the Suzhou Science and Technology Program under Grant SYG201923 and Grant SYG202131, and in part by the Key Program Special Fund in Xi’an Jiaotong–Liverpool University (XJTLU) under Grant KSF-T-07.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Wide-bandgap GaN devices are emerging as promising candidates for high switching frequency, high-voltage applications, and high-temperature operation in smart power conversion systems. This work introduces a monolithic GaN MIS-HEMT-based voltage reference consisting of two transistors (2T), a D-mode and an E-mode device. Experimental results have been obtained that a 2.5 V reference voltage (VREF) is produced for a supply voltage ranging from 5 to 50 V, achieving a maximum VREF line sensitivity of 0.065%/V and a temperature coefficient of 24.6~28.6 ppm/°C from -25 to 225 °C. This structure also shows competitive levels of uniformity, power consumption and flexibility. With the superior characteristics of the GaN device, the presented results will provide stable reference voltage in various sensing and biasing circuits, especially for GaN power ICs.
AB - Wide-bandgap GaN devices are emerging as promising candidates for high switching frequency, high-voltage applications, and high-temperature operation in smart power conversion systems. This work introduces a monolithic GaN MIS-HEMT-based voltage reference consisting of two transistors (2T), a D-mode and an E-mode device. Experimental results have been obtained that a 2.5 V reference voltage (VREF) is produced for a supply voltage ranging from 5 to 50 V, achieving a maximum VREF line sensitivity of 0.065%/V and a temperature coefficient of 24.6~28.6 ppm/°C from -25 to 225 °C. This structure also shows competitive levels of uniformity, power consumption and flexibility. With the superior characteristics of the GaN device, the presented results will provide stable reference voltage in various sensing and biasing circuits, especially for GaN power ICs.
KW - GaN
KW - MIS-HEMT
KW - monolithic integrated circuit
KW - voltage reference
UR - http://www.scopus.com/inward/record.url?scp=85143800834&partnerID=8YFLogxK
U2 - 10.1109/WiPDA56483.2022.9955269
DO - 10.1109/WiPDA56483.2022.9955269
M3 - Conference Proceeding
AN - SCOPUS:85143800834
T3 - 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022
SP - 95
EP - 98
BT - 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022
Y2 - 7 November 2022 through 9 November 2022
ER -