75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system

Shuangshuang Shao; Suyun Wang; Min Li; Tanghao Xie; Yuxiao Fang; Penghui Guo; Zhaofeng Chen; Jianwen Zhao

75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system

Shuangshuang Shao, Suyun Wang, Min Li, Tanghao Xie, Yuxiao Fang, Penghui Guo, Zhaofeng Chen, Jianwen Zhao^*

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Original language	English
Journal	Journal of Materials Chemistry C
Volume	21
Publication status	Published - 20 Apr 2023

Cite this

@article{96a772d07fcc44058185551a2280afdd,

title = "75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system",

author = "Shuangshuang Shao and Suyun Wang and Min Li and Tanghao Xie and Yuxiao Fang and Penghui Guo and Zhaofeng Chen and Jianwen Zhao",

year = "2023",

month = apr,

day = "20",

language = "English",

volume = "21",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

}

TY - JOUR

T1 - 75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system

AU - Shao, Shuangshuang

AU - Wang, Suyun

AU - Li, Min

AU - Xie, Tanghao

AU - Fang, Yuxiao

AU - Guo, Penghui

AU - Chen, Zhaofeng

AU - Zhao, Jianwen

PY - 2023/4/20

Y1 - 2023/4/20

M3 - Article

SN - 2050-7534

VL - 21

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

ER -