1 Tb/s high quality factor NAND gate using quantum-dot semiconductor optical amplifiers in Mach-Zehnder interferometer

A. Kotb*, K. E. Zoiros

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

The performance of all-optical logic NAND gate realized by employing quantum-dot semiconductor optical amplifiers (QD-SOAs)-based Mach-Zehnder interferometers (MZI) is numerically simulated. Boolean NAND operation is achieved by a series combination of properly configured and driven QD-SOAs-MZIs. The theoretical study is carried out by taking into account the effect of amplified spontaneous emission. The dependence of the output Q -factor on data signals and QD-SOA parameters is investigated and discussed. The obtained results indicate that the NAND gate is capable of operating at 1 Tb/s with high output quality factor (Q -factor) provided that these parameters are properly optimized.

Original languageEnglish
Pages (from-to)555-561
Number of pages7
JournalJournal of Computational Electronics
Volume13
Issue number2
DOIs
Publication statusPublished - Jun 2014

Keywords

  • Amplified spontaneous emission
  • Mach-Zehnder interferometer
  • NAND gate
  • Quantum-dot semiconductor optical amplifier

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