0.5 μm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications

Kenneth Tsui; Kevin J. Chen; Sang Lam; Mansun Chan

doi:10.1143/jjap.42.4982

0.5 μm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications

Kenneth Tsui, Kevin J. Chen^*, Sang Lam, Mansun Chan

^*Corresponding author for this work

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

0.5 μm thin-film silicon-on-sapphire (SOS) metal oxide semiconductor field effect transistors (MOSFETs) are investigated for applications in RF power amplifiers. Detailed static and pulsed I-V characteristics are measured to distinguish between fully depleted and partially depleted SOS MOSFETs. We have performed the first detailed large-signal load-pull characterization of SOS MOSFETs at 2 GHz with a Maury load-pull system with automated tuners. The maximum output power (P_out) of 18 dBm, maximum gain (G) of 12.5 dB and maximum power-added efficiency (PAE) of 55% were achieved. Third-order intermodulation (IM3) and adjacent channel power ratio (ACPR) were measured to characterize the linearity of an SOS MOSFET power amplifier. For the optimum design of RF power amplifiers, impedance matching information is essential as revealed by the large-signal load-pull measurements.

Original language	English
Pages (from-to)	4982-4986
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	8
DOIs	https://doi.org/10.1143/jjap.42.4982
Publication status	Published - 1 Aug 2003
Externally published	Yes

Keywords

Large signal
Load pull
Pulsed I-V characteristics
RF power amplifier
Silicon-on-sapphire (SOS)

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title = "0.5 μm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications",

abstract = "0.5 μm thin-film silicon-on-sapphire (SOS) metal oxide semiconductor field effect transistors (MOSFETs) are investigated for applications in RF power amplifiers. Detailed static and pulsed I-V characteristics are measured to distinguish between fully depleted and partially depleted SOS MOSFETs. We have performed the first detailed large-signal load-pull characterization of SOS MOSFETs at 2 GHz with a Maury load-pull system with automated tuners. The maximum output power (Pout) of 18 dBm, maximum gain (G) of 12.5 dB and maximum power-added efficiency (PAE) of 55% were achieved. Third-order intermodulation (IM3) and adjacent channel power ratio (ACPR) were measured to characterize the linearity of an SOS MOSFET power amplifier. For the optimum design of RF power amplifiers, impedance matching information is essential as revealed by the large-signal load-pull measurements.",

keywords = "Large signal, Load pull, Pulsed I-V characteristics, RF power amplifier, Silicon-on-sapphire (SOS)",

author = "Kenneth Tsui and Chen, {Kevin J.} and Sang Lam and Mansun Chan",

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T1 - 0.5 μm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications

AU - Tsui, Kenneth

AU - Chen, Kevin J.

AU - Lam, Sang

AU - Chan, Mansun

PY - 2003/8/1

Y1 - 2003/8/1

N2 - 0.5 μm thin-film silicon-on-sapphire (SOS) metal oxide semiconductor field effect transistors (MOSFETs) are investigated for applications in RF power amplifiers. Detailed static and pulsed I-V characteristics are measured to distinguish between fully depleted and partially depleted SOS MOSFETs. We have performed the first detailed large-signal load-pull characterization of SOS MOSFETs at 2 GHz with a Maury load-pull system with automated tuners. The maximum output power (Pout) of 18 dBm, maximum gain (G) of 12.5 dB and maximum power-added efficiency (PAE) of 55% were achieved. Third-order intermodulation (IM3) and adjacent channel power ratio (ACPR) were measured to characterize the linearity of an SOS MOSFET power amplifier. For the optimum design of RF power amplifiers, impedance matching information is essential as revealed by the large-signal load-pull measurements.

AB - 0.5 μm thin-film silicon-on-sapphire (SOS) metal oxide semiconductor field effect transistors (MOSFETs) are investigated for applications in RF power amplifiers. Detailed static and pulsed I-V characteristics are measured to distinguish between fully depleted and partially depleted SOS MOSFETs. We have performed the first detailed large-signal load-pull characterization of SOS MOSFETs at 2 GHz with a Maury load-pull system with automated tuners. The maximum output power (Pout) of 18 dBm, maximum gain (G) of 12.5 dB and maximum power-added efficiency (PAE) of 55% were achieved. Third-order intermodulation (IM3) and adjacent channel power ratio (ACPR) were measured to characterize the linearity of an SOS MOSFET power amplifier. For the optimum design of RF power amplifiers, impedance matching information is essential as revealed by the large-signal load-pull measurements.

KW - Large signal

KW - Load pull

KW - Pulsed I-V characteristics

KW - RF power amplifier

KW - Silicon-on-sapphire (SOS)

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M3 - Article

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SN - 0021-4922

VL - 42

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8

ER -

0.5 μm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications

Abstract

Keywords

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