Translated title of the contribution | Transparent thin film transistor device based on zirconium oxide and lanthanum oxide and preparation method thereof |
---|---|
Original language | Chinese (Simplified) |
Patent granted number | CN111129160B |
Validity date | 17/12/39 |
Publication status | Published - 13 Oct 2023 |
基于氧化锆和氧化镧的透明薄膜晶体管器件及其制备方法
Research output: Patent