| Translated title of the contribution | Germanium base MOS device |
|---|---|
| Original language | Chinese (Simplified) |
| Patent granted number | CN205177850U |
| Validity date | 9/10/25 |
| Publication status | Published - 20 Apr 2016 |
一种锗基MOS器件
Qifeng Lu (Inventor), Jingjin Wu (Inventor), Cezhou Zhao (Inventor)
Research output: Patent