一种用双氧水提高抗辐射性的薄膜晶体管器件及制备方法

Translated title of the contribution: Thin film transistor device capable of improving radiation resistance through hydrogen peroxide and preparation method

Yuxiao Fang (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor)

Research output: Patent

Translated title of the contributionThin film transistor device capable of improving radiation resistance through hydrogen peroxide and preparation method
Original languageChinese (Simplified)
Patent granted numberCN 110416310 B
Validity date26/06/39
Publication statusPublished - 13 Sept 2024

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