一种掺杂金属氧化物的阻变式随机存取存储器及制备方法

Zongjie Shen; Chun Zhao; Cezhou Zhao; Li Yang; Tian Luo; Yi Zhang; Yanbo Huang

一种掺杂金属氧化物的阻变式随机存取存储器及制备方法

Translated title of the contribution: Resistive random access memory doped with metal oxide and preparation method thereof

Zongjie Shen (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor), Tian Luo (Inventor), Yi Zhang (Inventor), Yanbo Huang (Inventor)

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Research output: Patent

Translated title of the contribution	Resistive random access memory doped with metal oxide and preparation method thereof
Original language	Chinese (Simplified)
Patent granted number	CN 110299448 B
Validity date	26/06/39
Publication status	Published - 31 Dec 2024

Cite this

@misc{2243a3acd4dc4a829c7aafddb168127b,

title = "一种掺杂金属氧化物的阻变式随机存取存储器及制备方法",

author = "Zongjie Shen and Chun Zhao and Cezhou Zhao and Li Yang and Tian Luo and Yi Zhang and Yanbo Huang",

year = "2024",

month = dec,

day = "31",

language = "简体中文",

type = "Patent",

note = "CN 110299448 B",

}