一种掺杂金属氧化物的阻变式随机存取存储器

Translated title of the contribution: Resistive random access memory doped with metal oxide

Zongjie Shen (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor), Tian Luo (Inventor), Yi Zhang (Inventor), Yanbo Huang (Inventor)

Research output: Patent

Translated title of the contributionResistive random access memory doped with metal oxide
Original languageChinese (Simplified)
Patent granted numberCN210272426U
Validity date26/06/29
Publication statusPublished - 7 Apr 2020

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