一种实现低导通电阻的增强型氮化镓晶体管的方法

Translated title of the contribution: Method for realizing enhanced gallium nitride transistor with low on-resistance

Yutao Cai (Inventor), Yang Wang (Inventor), Wen Liu (Inventor), Cezhou Zhao (Inventor)

Research output: Patent

Translated title of the contributionMethod for realizing enhanced gallium nitride transistor with low on-resistance
Original languageChinese (Simplified)
Patent granted numberCN110676172B
Validity date5/09/39
Publication statusPublished - 30 Jun 2023

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