一种基于纳米簇绝缘层的高性能薄膜晶体管及制备方法

Translated title of the contribution: High-performance thin film transistor based on nano-cluster insulating layer and preparation method thereof

Tianshi Zhao (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor)

Research output: Patent

Translated title of the contributionHigh-performance thin film transistor based on nano-cluster insulating layer and preparation method thereof
Original languageChinese (Simplified)
Patent granted numberCN 110061061 B
Validity date12/04/39
Publication statusPublished - 13 Sept 2024

Cite this