| Translated title of the contribution | Hafnium-silicate-based metal oxide semiconductor capacitor device and preparation method thereof |
|---|---|
| Original language | Chinese (Simplified) |
| Patent granted number | CN 110137156 B |
| Validity date | 12/04/39 |
| Publication status | Published - 13 Sept 2024 |
一种基于硅酸铪的金属氧化物半导体电容器件及制备方法
Research output: Patent