一种基于硅酸铪的金属氧化物半导体电容器件

Translated title of the contribution: A hafnium silicate-based metal oxide semiconductor capacitor device

Yuxiao Fang (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor)

Research output: Patent

Translated title of the contributionA hafnium silicate-based metal oxide semiconductor capacitor device
Original languageChinese (Simplified)
Patent granted numberCN209747510U
Validity date12/04/29
Publication statusPublished - 6 Dec 2019

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