一种双氧化层RRAM

Translated title of the contribution: Double-oxide-layer RRAM

Zongjie Shen (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor), Tian Luo (Inventor), Yi Zhang (Inventor), Yi Sun (Inventor)

Research output: Patent

Translated title of the contributionDouble-oxide-layer RRAM
Original languageChinese (Simplified)
Patent granted numberCN209747558U
Validity date12/04/29
Publication statusPublished - 6 Dec 2019

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