Project Details
Description
XJTLU-JITRI project on Semiconductor devices development and their applications.
The goal of this project is to achieve high-power, high-reliability diamond through innovative design of GaN-on-diamond epitaxial structure and bonding layer materials, research and development of key process modules for HEMT chip preparation, and thermal design of high-power devices. Based on gallium nitride materials and devices, it provides the most cutting-edge key core materials and devices for the new generation of wireless communication technology.
The goal of this project is to achieve high-power, high-reliability diamond through innovative design of GaN-on-diamond epitaxial structure and bonding layer materials, research and development of key process modules for HEMT chip preparation, and thermal design of high-power devices. Based on gallium nitride materials and devices, it provides the most cutting-edge key core materials and devices for the new generation of wireless communication technology.
| Status | Active |
|---|---|
| Effective start/end date | 3/06/24 → 2/06/28 |
Collaborative partners
- Xi'an Jiaotong-Liverpool University (lead)
- Suzhou Hanhua Semiconductors
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