GaN High Electron Mobility Transistors (HEMT) for High Temperature Applications

  • Zhao, Cezhou (PI)

Project: Internal Research Project

Project Details

Project Title (In Chinese)

耐高温氮化镓器件之研究

Fund Amount (RMB)

100000.00
Project CategoryRDF-A
StatusFinished
Effective start/end date1/11/1531/01/18

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