Au-free ohmic contact and CMOS thin film technology for GaN HEMT devices

Project: Governmental Research Project

Project Details

Project Title (In Chinese)

高性能GaN基器件无金工艺和CMOS绝缘薄膜生长技术研究

Fund Amount (RMB)

50000.00
Project CategorySuzhou Science and Technology Development Planning Programme: Key Industrial Technology Innovation - Prospective Applied Basic Research Project
StatusFinished
Effective start/end date1/07/1730/06/19

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