The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

X. Huang, X. H. Zhang*, Y. G. Zhu, T. Li, L. F. Han, X. J. Shang, H. Q. Ni, Z. C. Niu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

Original languageEnglish
Pages (from-to)1510-1513
Number of pages4
JournalOptics Communications
Issue number7
Publication statusPublished - 1 Apr 2010
Externally publishedYes


  • InAs quantum dots
  • Nonlinear refraction
  • Reflection Z-scan

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