The effect of strain on gas-surface reactivity in group-IV heteroepitaxial systems

A. M. Lam, Y. J. Zheng, J. R. Engstrom*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Supersonic molecular beam techniques have been employed to examine the dissociative adsorption of GeH4 and Si2H6 on strained Si1-xGex (0≤x≤1) epitaxial overlayers deposited on Si(100). Low-energy ion scattering spectrometry (LEISS) has been utilized to quantify in situ the topmost Ge surface composition of the Si1-xGex films. Through the measurements of reaction probability we find that these ultrathin strained semiconducting overlayers, both alloy and pure component (i.e., Ge/Si(100)), exhibit enhanced gas-surface reactivity when compared to their bulk (relaxed) counterparts, reflecting the critical role played by strain in these epitaxial overlayers.

Original languageEnglish
Pages (from-to)229-234
Number of pages6
JournalChemical Physics Letters
Volume292
Issue number1-2
DOIs
Publication statusPublished - 31 Jul 1998
Externally publishedYes

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