Abstract
Supersonic molecular beam techniques have been employed to examine the dissociative adsorption of GeH4 and Si2H6 on strained Si1-xGex (0≤x≤1) epitaxial overlayers deposited on Si(100). Low-energy ion scattering spectrometry (LEISS) has been utilized to quantify in situ the topmost Ge surface composition of the Si1-xGex films. Through the measurements of reaction probability we find that these ultrathin strained semiconducting overlayers, both alloy and pure component (i.e., Ge/Si(100)), exhibit enhanced gas-surface reactivity when compared to their bulk (relaxed) counterparts, reflecting the critical role played by strain in these epitaxial overlayers.
Original language | English |
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Pages (from-to) | 229-234 |
Number of pages | 6 |
Journal | Chemical Physics Letters |
Volume | 292 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 31 Jul 1998 |
Externally published | Yes |