The effect of strain on gas-surface reactivity in group-IV heteroepitaxial systems

A. M. Lam; Y. J. Zheng; J. R. Engstrom

doi:10.1016/S0009-2614(98)00668-X

The effect of strain on gas-surface reactivity in group-IV heteroepitaxial systems

A. M. Lam, Y. J. Zheng, J. R. Engstrom^*

^*Corresponding author for this work

Cornell University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Supersonic molecular beam techniques have been employed to examine the dissociative adsorption of GeH₄ and Si₂H₆ on strained Si_1-xGe_x (0≤x≤1) epitaxial overlayers deposited on Si(100). Low-energy ion scattering spectrometry (LEISS) has been utilized to quantify in situ the topmost Ge surface composition of the Si_1-xGe_x films. Through the measurements of reaction probability we find that these ultrathin strained semiconducting overlayers, both alloy and pure component (i.e., Ge/Si(100)), exhibit enhanced gas-surface reactivity when compared to their bulk (relaxed) counterparts, reflecting the critical role played by strain in these epitaxial overlayers.

Original language	English
Pages (from-to)	229-234
Number of pages	6
Journal	Chemical Physics Letters
Volume	292
Issue number	1-2
DOIs	https://doi.org/10.1016/S0009-2614(98)00668-X
Publication status	Published - 31 Jul 1998
Externally published	Yes

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title = "The effect of strain on gas-surface reactivity in group-IV heteroepitaxial systems",

abstract = "Supersonic molecular beam techniques have been employed to examine the dissociative adsorption of GeH4 and Si2H6 on strained Si1-xGex (0≤x≤1) epitaxial overlayers deposited on Si(100). Low-energy ion scattering spectrometry (LEISS) has been utilized to quantify in situ the topmost Ge surface composition of the Si1-xGex films. Through the measurements of reaction probability we find that these ultrathin strained semiconducting overlayers, both alloy and pure component (i.e., Ge/Si(100)), exhibit enhanced gas-surface reactivity when compared to their bulk (relaxed) counterparts, reflecting the critical role played by strain in these epitaxial overlayers.",

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AU - Zheng, Y. J.

AU - Engstrom, J. R.

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Y1 - 1998/7/31

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AB - Supersonic molecular beam techniques have been employed to examine the dissociative adsorption of GeH4 and Si2H6 on strained Si1-xGex (0≤x≤1) epitaxial overlayers deposited on Si(100). Low-energy ion scattering spectrometry (LEISS) has been utilized to quantify in situ the topmost Ge surface composition of the Si1-xGex films. Through the measurements of reaction probability we find that these ultrathin strained semiconducting overlayers, both alloy and pure component (i.e., Ge/Si(100)), exhibit enhanced gas-surface reactivity when compared to their bulk (relaxed) counterparts, reflecting the critical role played by strain in these epitaxial overlayers.

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JO - Chemical Physics Letters

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The effect of strain on gas-surface reactivity in group-IV heteroepitaxial systems

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