The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

X. Huang; X. H. Zhang; Y. G. Zhu; T. Li; L. F. Han; X. J. Shang; H. Q. Ni; Z. C. Niu

doi:10.1088/2040-8978/12/5/055203

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

X. Huang, X. H. Zhang, Y. G. Zhu, T. Li, L. F. Han, X. J. Shang, H. Q. Ni, Z. C. Niu

CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

Original language	English
Article number	055203
Journal	Journal of Optics
Volume	12
Issue number	5
DOIs	https://doi.org/10.1088/2040-8978/12/5/055203
Publication status	Published - 2010
Externally published	Yes

Keywords

Dc electric field effect
InAs quantum dots
Nonlinear refraction
Reflection Z-scan

Access to Document

10.1088/2040-8978/12/5/055203

Cite this

@article{f6d0cc161def4e6189a9d81f014d9a40,

title = "The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots",

abstract = "The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.",

keywords = "Dc electric field effect, InAs quantum dots, Nonlinear refraction, Reflection Z-scan",

author = "X. Huang and Zhang, {X. H.} and Zhu, {Y. G.} and T. Li and Han, {L. F.} and Shang, {X. J.} and Ni, {H. Q.} and Niu, {Z. C.}",

year = "2010",

doi = "10.1088/2040-8978/12/5/055203",

language = "English",

volume = "12",

journal = "Journal of Optics",

issn = "2040-8978",

number = "5",

}

TY - JOUR

T1 - The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

AU - Huang, X.

AU - Zhang, X. H.

AU - Zhu, Y. G.

AU - Li, T.

AU - Han, L. F.

AU - Shang, X. J.

AU - Ni, H. Q.

AU - Niu, Z. C.

PY - 2010

Y1 - 2010

N2 - The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

AB - The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

KW - Dc electric field effect

KW - InAs quantum dots

KW - Nonlinear refraction

KW - Reflection Z-scan

UR - http://www.scopus.com/inward/record.url?scp=77952119856&partnerID=8YFLogxK

U2 - 10.1088/2040-8978/12/5/055203

DO - 10.1088/2040-8978/12/5/055203

M3 - Article

AN - SCOPUS:77952119856

SN - 2040-8978

VL - 12

JO - Journal of Optics

JF - Journal of Optics

IS - 5

M1 - 055203

ER -

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

Abstract

Keywords

Access to Document

Other files and links

Cite this