Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

T. Li, X. H. Zhang*, Y. G. Zhu, X. Huang, L. F. Han, X. J. Shang, H. Q. Ni, Z. C. Niu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Original languageEnglish
Pages (from-to)1597-1600
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number5
Publication statusPublished - Mar 2010
Externally publishedYes


  • DP mechanism
  • Hole spin relaxation
  • Ultrathin InAs monolayer

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