Study of Ohmic Contact on p-InGaN Using MIGS Model

Abdullah Al Islam; Md Soyaeb Hasan; Md Rafiqul Islam; Md Rejvi Kaysir; Ibrahim Mustafa Mehedi

doi:10.1109/ECACE.2019.8679389

Study of Ohmic Contact on p-InGaN Using MIGS Model

Abdullah Al Islam, Md Soyaeb Hasan, Md Rafiqul Islam, Md Rejvi Kaysir, Ibrahim Mustafa Mehedi

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

The formation of ohmic contact to p-InGaN has been analyzed here using the Metal induced Gap States (MIGS) model with an ultrathin interfacial layer of insulator. The position of Fermi level and barrier height modulation has been investigated for two different combinations of Metal-Insulator with p-InGaN. In case of p-InGaN with 2nm layer of NiO, Au formed a barrier height of 0.49 eV. The contact resistivity for Au/NiO2 (nm)/ p-In0.48Ga0.52N is found to be 2.35× 10-4 Ω- cm2 at 300K and 1.15× 10-4 Ω cm2 at 600K. It is also observed that the metal with higher work function gives lower barrier height and contact resistivity in case of p-InGaN. For Pt/AI₂O₃(2 nm)/p-In_0.48Ga_0.52N, the barrier height becomes 0.312 eV and the contact resistivity is estimated as 1.9× 10-4Ω- cm2 at 300K and 0.75× 10-4Ω- cm2 at 600K. Thus, Pt contact shows better performance than Au contact to p-InGaN. This information of MIS contact could be a good insight for conventional CMOS in case of source/drain applications.

Original language	English
Title of host publication	2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538691113
DOIs	https://doi.org/10.1109/ECACE.2019.8679389
Publication status	Published - 1 Apr 2019
Externally published	Yes
Event	2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019 - Cox's Bazar, Bangladesh Duration: 7 Feb 2019 → 9 Feb 2019

Publication series

Name	2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019

Conference

Conference	2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019
Country/Territory	Bangladesh
City	Cox's Bazar
Period	7/02/19 → 9/02/19

Keywords

Barrier height
Contact resistivity
MIGS model
p-InGaN

Access to Document

10.1109/ECACE.2019.8679389

Cite this

Islam, A. A., Hasan, M. S., Islam, M. R., Kaysir, M. R., & Mehedi, I. M. (2019). Study of Ohmic Contact on p-InGaN Using MIGS Model. In 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019 Article 8679389 (2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECACE.2019.8679389

Islam, Abdullah Al ; Hasan, Md Soyaeb ; Islam, Md Rafiqul et al. / Study of Ohmic Contact on p-InGaN Using MIGS Model. 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019).

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title = "Study of Ohmic Contact on p-InGaN Using MIGS Model",

abstract = "The formation of ohmic contact to p-InGaN has been analyzed here using the Metal induced Gap States (MIGS) model with an ultrathin interfacial layer of insulator. The position of Fermi level and barrier height modulation has been investigated for two different combinations of Metal-Insulator with p-InGaN. In case of p-InGaN with 2nm layer of NiO, Au formed a barrier height of 0.49 eV. The contact resistivity for Au/NiO2 (nm)/ p-In0.48Ga0.52N is found to be 2.35× 10-4 Ω- cm2 at 300K and 1.15× 10-4 Ω cm2 at 600K. It is also observed that the metal with higher work function gives lower barrier height and contact resistivity in case of p-InGaN. For Pt/AI2O3(2 nm)/p-In0.48Ga0.52N, the barrier height becomes 0.312 eV and the contact resistivity is estimated as 1.9× 10-4Ω- cm2 at 300K and 0.75× 10-4Ω- cm2 at 600K. Thus, Pt contact shows better performance than Au contact to p-InGaN. This information of MIS contact could be a good insight for conventional CMOS in case of source/drain applications.",

keywords = "Barrier height, Contact resistivity, MIGS model, p-InGaN",

author = "Islam, {Abdullah Al} and Hasan, {Md Soyaeb} and Islam, {Md Rafiqul} and Kaysir, {Md Rejvi} and Mehedi, {Ibrahim Mustafa}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019 ; Conference date: 07-02-2019 Through 09-02-2019",

year = "2019",

month = apr,

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doi = "10.1109/ECACE.2019.8679389",

language = "English",

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Islam, AA, Hasan, MS, Islam, MR, Kaysir, MR & Mehedi, IM 2019, Study of Ohmic Contact on p-InGaN Using MIGS Model. in 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019., 8679389, 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019, Institute of Electrical and Electronics Engineers Inc., 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019, Cox's Bazar, Bangladesh, 7/02/19. https://doi.org/10.1109/ECACE.2019.8679389

Study of Ohmic Contact on p-InGaN Using MIGS Model. / Islam, Abdullah Al; Hasan, Md Soyaeb; Islam, Md Rafiqul et al.
2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8679389 (2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Study of Ohmic Contact on p-InGaN Using MIGS Model

AU - Islam, Abdullah Al

AU - Hasan, Md Soyaeb

AU - Islam, Md Rafiqul

AU - Kaysir, Md Rejvi

AU - Mehedi, Ibrahim Mustafa

PY - 2019/4/1

Y1 - 2019/4/1

N2 - The formation of ohmic contact to p-InGaN has been analyzed here using the Metal induced Gap States (MIGS) model with an ultrathin interfacial layer of insulator. The position of Fermi level and barrier height modulation has been investigated for two different combinations of Metal-Insulator with p-InGaN. In case of p-InGaN with 2nm layer of NiO, Au formed a barrier height of 0.49 eV. The contact resistivity for Au/NiO2 (nm)/ p-In0.48Ga0.52N is found to be 2.35× 10-4 Ω- cm2 at 300K and 1.15× 10-4 Ω cm2 at 600K. It is also observed that the metal with higher work function gives lower barrier height and contact resistivity in case of p-InGaN. For Pt/AI2O3(2 nm)/p-In0.48Ga0.52N, the barrier height becomes 0.312 eV and the contact resistivity is estimated as 1.9× 10-4Ω- cm2 at 300K and 0.75× 10-4Ω- cm2 at 600K. Thus, Pt contact shows better performance than Au contact to p-InGaN. This information of MIS contact could be a good insight for conventional CMOS in case of source/drain applications.

AB - The formation of ohmic contact to p-InGaN has been analyzed here using the Metal induced Gap States (MIGS) model with an ultrathin interfacial layer of insulator. The position of Fermi level and barrier height modulation has been investigated for two different combinations of Metal-Insulator with p-InGaN. In case of p-InGaN with 2nm layer of NiO, Au formed a barrier height of 0.49 eV. The contact resistivity for Au/NiO2 (nm)/ p-In0.48Ga0.52N is found to be 2.35× 10-4 Ω- cm2 at 300K and 1.15× 10-4 Ω cm2 at 600K. It is also observed that the metal with higher work function gives lower barrier height and contact resistivity in case of p-InGaN. For Pt/AI2O3(2 nm)/p-In0.48Ga0.52N, the barrier height becomes 0.312 eV and the contact resistivity is estimated as 1.9× 10-4Ω- cm2 at 300K and 0.75× 10-4Ω- cm2 at 600K. Thus, Pt contact shows better performance than Au contact to p-InGaN. This information of MIS contact could be a good insight for conventional CMOS in case of source/drain applications.

KW - Barrier height

KW - Contact resistivity

KW - MIGS model

KW - p-InGaN

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U2 - 10.1109/ECACE.2019.8679389

DO - 10.1109/ECACE.2019.8679389

M3 - Conference Proceeding

AN - SCOPUS:85064715598

T3 - 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019

BT - 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019

Y2 - 7 February 2019 through 9 February 2019

ER -

Islam AA, Hasan MS, Islam MR, Kaysir MR, Mehedi IM. Study of Ohmic Contact on p-InGaN Using MIGS Model. In 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8679389. (2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019). doi: 10.1109/ECACE.2019.8679389

Study of Ohmic Contact on p-InGaN Using MIGS Model

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