Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters

Junzhe Tan; Dongyi Yang; Shiqiang Wu; Yuhao Zhu; Yaoyao Pan; Pengju Cui; Wen Liu

doi:10.1109/ICICDT59917.2023.10332333

Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters

Junzhe Tan^*, Dongyi Yang, Shiqiang Wu, Yuhao Zhu, Yaoyao Pan, Pengju Cui, Wen Liu

^*Corresponding author for this work

School of Advanced Technology

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

In this paper, two step-down level shifter circuit structures based on AlGaN/GaN (aluminum-gallium-nitride/gallium-nitride) MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility-transistors) are proposed. The level shifter circuits have the capability to produce voltage drop. They are used to address the challenges of anomalous operation state in the sawtooth wave generator of PWM (pulse width modulation) integrated circuit, while also mitigating the undesirable device degradation resulting from high output voltage from the comparator. Proposed circuit structures are simulated and calibrated by the ADS (Advanced Design System) platform. Additionally, calculations are carried out to analyze the principle of output voltage drop. Subsequently, the circuit output characteristics and parameter settings of these circuit structures are discussed, which offer insights and advice regarding their feasibility and the potential of step-down level shifter circuit structures for monolithically integrated GaN power converters.

Original language	English
Title of host publication	Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023
Editors	Duy-Hieu Bui
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	52-56
Number of pages	5
ISBN (Electronic)	9798350319316
DOIs	https://doi.org/10.1109/ICICDT59917.2023.10332333
Publication status	Published - 2023
Event	2023 International Conference on IC Design and Technology, ICICDT 2023 - Tokyo, Japan Duration: 25 Sept 2023 → 27 Sept 2023

Publication series

Name	Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023

Conference

Conference	2023 International Conference on IC Design and Technology, ICICDT 2023
Country/Territory	Japan
City	Tokyo
Period	25/09/23 → 27/09/23

Keywords

AlGaN/GaN MIS-HEMTs
Comparator
Integrated circuit
Step-down level shifter

Access to Document

10.1109/ICICDT59917.2023.10332333

Cite this

Tan, J., Yang, D., Wu, S., Zhu, Y., Pan, Y., Cui, P., & Liu, W. (2023). Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. In D.-H. Bui (Ed.), Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023 (pp. 52-56). (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT59917.2023.10332333

Tan, Junzhe ; Yang, Dongyi ; Wu, Shiqiang et al. / Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. editor / Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 52-56 (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023).

@inproceedings{de422bd3d2dd4698afd62601a46a847e,

title = "Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters",

abstract = "In this paper, two step-down level shifter circuit structures based on AlGaN/GaN (aluminum-gallium-nitride/gallium-nitride) MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility-transistors) are proposed. The level shifter circuits have the capability to produce voltage drop. They are used to address the challenges of anomalous operation state in the sawtooth wave generator of PWM (pulse width modulation) integrated circuit, while also mitigating the undesirable device degradation resulting from high output voltage from the comparator. Proposed circuit structures are simulated and calibrated by the ADS (Advanced Design System) platform. Additionally, calculations are carried out to analyze the principle of output voltage drop. Subsequently, the circuit output characteristics and parameter settings of these circuit structures are discussed, which offer insights and advice regarding their feasibility and the potential of step-down level shifter circuit structures for monolithically integrated GaN power converters.",

keywords = "AlGaN/GaN MIS-HEMTs, Comparator, Integrated circuit, Step-down level shifter",

author = "Junzhe Tan and Dongyi Yang and Shiqiang Wu and Yuhao Zhu and Yaoyao Pan and Pengju Cui and Wen Liu",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Conference on IC Design and Technology, ICICDT 2023 ; Conference date: 25-09-2023 Through 27-09-2023",

year = "2023",

doi = "10.1109/ICICDT59917.2023.10332333",

language = "English",

series = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "52--56",

editor = "Duy-Hieu Bui",

booktitle = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",

}

Tan, J, Yang, D, Wu, S, Zhu, Y, Pan, Y, Cui, P & Liu, W 2023, Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. in D-H Bui (ed.), Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023, Institute of Electrical and Electronics Engineers Inc., pp. 52-56, 2023 International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, 25/09/23. https://doi.org/10.1109/ICICDT59917.2023.10332333

Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. / Tan, Junzhe; Yang, Dongyi; Wu, Shiqiang et al.
Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. ed. / Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2023. p. 52-56 (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T1 - Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters

AU - Tan, Junzhe

AU - Yang, Dongyi

AU - Wu, Shiqiang

AU - Zhu, Yuhao

AU - Pan, Yaoyao

AU - Cui, Pengju

AU - Liu, Wen

PY - 2023

Y1 - 2023

N2 - In this paper, two step-down level shifter circuit structures based on AlGaN/GaN (aluminum-gallium-nitride/gallium-nitride) MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility-transistors) are proposed. The level shifter circuits have the capability to produce voltage drop. They are used to address the challenges of anomalous operation state in the sawtooth wave generator of PWM (pulse width modulation) integrated circuit, while also mitigating the undesirable device degradation resulting from high output voltage from the comparator. Proposed circuit structures are simulated and calibrated by the ADS (Advanced Design System) platform. Additionally, calculations are carried out to analyze the principle of output voltage drop. Subsequently, the circuit output characteristics and parameter settings of these circuit structures are discussed, which offer insights and advice regarding their feasibility and the potential of step-down level shifter circuit structures for monolithically integrated GaN power converters.

AB - In this paper, two step-down level shifter circuit structures based on AlGaN/GaN (aluminum-gallium-nitride/gallium-nitride) MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility-transistors) are proposed. The level shifter circuits have the capability to produce voltage drop. They are used to address the challenges of anomalous operation state in the sawtooth wave generator of PWM (pulse width modulation) integrated circuit, while also mitigating the undesirable device degradation resulting from high output voltage from the comparator. Proposed circuit structures are simulated and calibrated by the ADS (Advanced Design System) platform. Additionally, calculations are carried out to analyze the principle of output voltage drop. Subsequently, the circuit output characteristics and parameter settings of these circuit structures are discussed, which offer insights and advice regarding their feasibility and the potential of step-down level shifter circuit structures for monolithically integrated GaN power converters.

KW - AlGaN/GaN MIS-HEMTs

KW - Comparator

KW - Integrated circuit

KW - Step-down level shifter

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DO - 10.1109/ICICDT59917.2023.10332333

M3 - Conference Proceeding

AN - SCOPUS:85180774633

T3 - Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023

SP - 52

EP - 56

BT - Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023

A2 - Bui, Duy-Hieu

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International Conference on IC Design and Technology, ICICDT 2023

Y2 - 25 September 2023 through 27 September 2023

ER -

Tan J, Yang D, Wu S, Zhu Y, Pan Y, Cui P et al. Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. In Bui DH, editor, Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 52-56. (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023). doi: 10.1109/ICICDT59917.2023.10332333

Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters

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