@inproceedings{924e1e5bbc814429b65f945e8be178fa,
title = "Selective SI:C epitaxy in recessed areas and characterization of the material properties",
abstract = "Si:C epitaxy was investigated to increase the substitutional carbon concentration, to achieve selectivity, and to understand growth characteristics on different Si crystallographic planes. A defective microstructure was observed next to the recess sidewalls. It was found that Si:C epitaxial growth on (110) crystallographic plane is heavily defective while the same epitaxy on (100) plane shows defect-free microstructure. By process optimization and using the appropriate chemistries for deposition and etch steps, we have developed a selective Si:C epitaxy process which result in a defect-free epitaxial layer that fills a 60 nm deep recessed area with 1.5 % substitutional [C] with 100 % substitutionality, and 100 % selectivity on dielectrics. Also, thermal stability of the substitutional [C] in Si:C epitaxy was tested with spike annealing at 1050°C No loss of substitutional [C] was observed after the spike annealing from a Si:C film with 100 % carbon substitutionality.",
author = "Yihwan Kim and Zhiyuan Ye and Andrew Lam and Ali Zojaji and Yonah Cho and Satheesh Kuppurao",
year = "2007",
doi = "10.1149/1.2727427",
language = "English",
isbn = "9781566775502",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "409--417",
booktitle = "ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS",
edition = "1",
note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}