Robust electrical characteristics of multiple-layer InAs/GaAs quantum-dot diodes under gamma irradiation

Yifei Mu, S. Lam, C. Z. Zhao, N. Babazadeh, R. A. Hogg, K. Nishi, K. Takemasa, M. Sugawara

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review


To conclude, the InAs/GaAs QD devices display radiation-tolerant DC characteristics despite high total dose of gamma radiation. No permanent ionising damage to the III-V compound semiconductor devices has been observed. The off-state leakage current is not worsened even when the device is continuously irradiated by gamma radiation. The results show great promise of InAs/GaAs QD structure for realization of IR photodetectors with low noise floor and high reliability in radiation environments.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781467381345
Publication statusPublished - 3 Aug 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 21 Jun 201524 Jun 2015

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference73rd Annual Device Research Conference, DRC 2015
Country/TerritoryUnited States


  • Current measurement
  • Electrodes
  • Gold
  • Leakage currents
  • Radiation effects
  • Time measurement

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