RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology

Sang Lam*, Hui Wan, Pin Su, Peter W. Wyatt, C. L. Chen, Ali M. Niknejad, Chenming Hu, Ping K. Ko, Mansun Chan

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

9 Citations (Scopus)

Abstract

The metal T-gate structure in fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is investigated from the RF perspective. With the expected low gate resistance RG, the metal T-gate FD-SOI MOSFET achieves a higher fmax of 67 GHz as compared with 12.5 GHz in the silicided polysilicon gate counterpart. However, the metal T-gate FD-SOI MOSFET has a lower fT of 35 GHz as compared with 44 GHz for the self-aligned polysilicon gate. The extracted parameters reveal that the T-gate structure results in an extra 40% and 80% increase in the parasitic capacitances Cgs and Cgd respectively. The metal gate structure together with the source-drain structure have to be co-optimized to boost the RF performance of FD-SOI MOSFET. A simple guideline to optimize the structure is included.

Original languageEnglish
Pages (from-to)251-253
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number4
DOIs
Publication statusPublished - 1 Apr 2003
Externally publishedYes

Keywords

  • Fully-depleted SOI MOSFET
  • Metal gate
  • RF CMOS
  • T-gate structure

Cite this