Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature

Y. F. Qi, Z. J. Shen, Chun Zhao*, I. Z. Mitrovic, W. Y. Xu, E. G. Lim, L. Yang, J. H. He, T. Luo, Y. B. Huang, Ce Zhou Zhao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide (AlOx) and graphene oxide (GO) dielectric films, which were solution-processed under low annealing temperatures of 250 °C and 50 °C for AlOx and GO dielectric films, respectively. As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlOx and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property. A smaller operation voltage and better stability were demonstrated in AlOx based RRAM devices while higher resistance magnitude of high resistance state (HRS) and resistance ratio were observed in GO based RRAM devices. The current study opens up promising applications of environmental-friendly solution-processed AlOx and GO films with lower energy consumption for non-volatile memory (NVM).

Original languageEnglish
Article number107735
JournalSolid-State Electronics
Publication statusPublished - Jun 2020


  • Aluminum oxide
  • Graphene oxide
  • Resistive switching
  • Solution-processed

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