Recent advances of solution-processed heterojunction oxide thin-film transistors

Yanwei Li, Chun Zhao, Deliang Zhu, Peijiang Cao, Shun Han, Youming Lu, Ming Fang, Wenjun Liu, Wangying Xu*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

19 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

Original languageEnglish
Article number965
JournalNanomaterials
Volume10
Issue number5
DOIs
Publication statusPublished - May 2020

Keywords

  • Heterojunction
  • Metal oxide semiconductor
  • Solution-processed
  • Thin-film transistors

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