Realization of III–V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique

Yuan qing Huang, Rong Huang, Qing lu Liu, Chang cheng Zheng, Ji qiang Ning, Yong Peng, Zi yang Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


In this paper, we demonstrated the fabrication of one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on III–V GaAs substrates utilizing laser direct writing (LDW) technique. Metal thin films (Ti) and phase change materials (Ge2Sb2Te5 (GST) and Ge2Sb1.8Bi0.2Te5 (GSBT)) were chosen as photoresists to achieve small feature sizes of semiconductor nanostructures. A minimum feature size of about 50 nm about a quarter of the optical diffraction limit was obtained on the photoresists, and 1D III–V semiconductor nanolines with a minimum width of 150 nm were successfully acquired on the GaAs substrate which was smaller than the best results acquired on Si substrate ever reported. 2D nanosquare holes were fabricated as well by using Ti thin film as the photoresist, with a side width of about 200 nm, but the square holes changed to a rectangle shape when GST or GSBT was employed as the photoresist, which mainly resulted from the interaction of two cross-temperature fields induced by two scanning laser beams. The interacting mechanism of different photoresists in preparing periodic nanostructures with the LDW technique was discussed in detail.

Original languageEnglish
Article number12
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - 1 Dec 2017


  • III–V semiconductor
  • Laser direct writing
  • Periodic nanostructures
  • Phase change materials


Dive into the research topics of 'Realization of III–V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique'. Together they form a unique fingerprint.

Cite this